| 摘要 |
<p>An infrared element (10a) at least includes a light emission layer formation section (9a) formed by, for example, a first conductive clad layer (2a) for infrared light, an active layer (3a), and a second conductive clad layer (4a). A red element at least includes a light emission layer formation section (9b) formed by, for example, a first conductive clad layer (2b) for red light, an active layer (3b), and a second conductive clad layer (4b). The infrared element (10a) and the red element are formed on the same semiconductor substrate (1) and their second conductive clad layers (4a, 4b) are formed by the same material. As a result, a ridge formation process may be shared and they can have a window structure capable of high output operation for both of the elements.</p> |
