| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which permits high speed of circuit operation, microfabrication of chips, and a simplified process, in a bootstrap circuit. SOLUTION: The semiconductor device is provided with: a bootstrap circuit which is comprised of a selection transistor 81 formed of an n-channel MOS transistor; a voltage boosting transistor 82 of which gate is connected with the drain of the selection transistor 81; and a voltage boosting circuit which is connected between the gate and the source of the voltage boosting transistor 82 and boosts a gate voltage against the source of the voltage boosting transistor 82. The dimension L1 of the gate of the selection transistor 81 is smaller than that L2 of the gate of the voltage boosting transistor 82. COPYRIGHT: (C)2007,JPO&INPIT
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