| 摘要 |
A semiconductor manufacturing apparatus and process for forming a nitrided dielectric film includes generating a plasma source ( 44 ) over a wafer structure ( 46 ), where the plasma source ( 44 ) includes neutral species (such as nitrogen atoms) and charged species (such as nitrogen ions) that are formed in an inductively coupled plasma reactor. Before the charged species in the plasma ( 44 ) can penetrate the wafer structure ( 46 ), an electrically connected mesh structure ( 45, 47 ) between the plasma source ( 44 ) and wafer structure ( 46 ) blocks the charged species. In addition or in the alternative, a magnetic field ( 69 ) aligned in parallel with the surface of the wafer structure ( 66 ) is established in close proximity to the wafer structure ( 66 ) in order to trap the charged species. By removing charged species, an improved, narrower nitrogen concentration profile is obtained.
|
