Bit line`s leakage current detecting method for e.g. dynamic random access memory, involves short-circuiting read amplifier with bit line by isolation transistor, and detecting voltage on bit line by read amplifier

摘要

The method involves isolating connections of a read amplifier from a bit line by an isolation transistor, and selecting a memory cell on the bit line. Leakage current measurably changes voltage on the bit line within a holding time, when waiting until a pre-determined holding time is elapsed. The read amplifier is short-circuited with the bit line by the isolation transistor, and the voltage on the bit line is detected by the amplifier. An independent claim is also included for a semiconductor memory comprising a bit line, a sense amplifier and an isolation transistor.