METHOD FOR FABRICATING FLASH MEMORY DEVICE

摘要

A method for fabricating a flash memory device is provided to basically avoid a loss of a conductive layer for a floating gate by forming a barrier layer on the surface of an isolation trench. A conductive layer(12) for a floating gate is formed on a semiconductor substrate(10). The conductive layer for the floating gate and a predetermined depth of the semiconductor substrate are etched to form a trench(14). A barrier layer(15) is formed on the resultant structure, having a stack layer composed of an oxide layer and a nitride layer. The oxide layer and the nitride layer have a thickness of 1~1000 angstroms. An insulation layer is gap-filled in the trench to form an isolation layer.