发明名称 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same
摘要 <p>The object of the present invention is to provide a resist pattern thickening material, etc. which, when coated over a resist pattern formed of ArF resist material, etc., can efficiently thicken the resist pattern such as lines and spaces pattern, etc. regardless of the composition of ArF resist material, and the like; which can easily control the thickening amount of resist pattern by process condition; and which can easily and efficiently form a fine space pattern beyond the exposure (resolution) limits of light sources of the exposure devices at low cost. The resist pattern thickening material of the present invention comprises a solubilizer which melts the resist pattern at the temperature near its melting point and a water-soluble element. The process for forming a resist pattern of the present invention comprises forming a resist pattern and coating a resist pattern thickening material of the present invention over the surface of the resist pattern.</p>
申请公布号 EP1757988(A1) 申请公布日期 2007.02.28
申请号 EP20050026737 申请日期 2005.12.07
申请人 FUJITSU LTD. 发明人 TAKAHISA, NAMIKI;KOJI, NOZAKI;MIWA, KOZAWA
分类号 G03F7/40 主分类号 G03F7/40
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