发明名称 |
High speed switching MOSFETS using multi-parallel die packages with/without special leadframes |
摘要 |
This invention discloses a method for configuring a power MOSFET package by packaging several paralleled and separated MOSFET chips in the assembly. The method further includes a step of connecting the gate pad on each of these MOSFET chips with a low-resistance gate bus. The package resistance and inductance are significantly reduced and switching speed and heat dissipation are substantially improved.
|
申请公布号 |
US7183616(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20020208275 |
申请日期 |
2002.07.30 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD. |
发明人 |
BHALLA ANUP;LUI SIK K;LUO LEESHAWN;HO YUEH-SE |
分类号 |
H01L23/62;H01L23/34;H01L23/495;H01L23/50;H01L25/07;H01L29/76;H01L29/94;H01L31/113;H01L31/119 |
主分类号 |
H01L23/62 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|