发明名称 High speed switching MOSFETS using multi-parallel die packages with/without special leadframes
摘要 This invention discloses a method for configuring a power MOSFET package by packaging several paralleled and separated MOSFET chips in the assembly. The method further includes a step of connecting the gate pad on each of these MOSFET chips with a low-resistance gate bus. The package resistance and inductance are significantly reduced and switching speed and heat dissipation are substantially improved.
申请公布号 US7183616(B2) 申请公布日期 2007.02.27
申请号 US20020208275 申请日期 2002.07.30
申请人 ALPHA & OMEGA SEMICONDUCTOR, LTD. 发明人 BHALLA ANUP;LUI SIK K;LUO LEESHAWN;HO YUEH-SE
分类号 H01L23/62;H01L23/34;H01L23/495;H01L23/50;H01L25/07;H01L29/76;H01L29/94;H01L31/113;H01L31/119 主分类号 H01L23/62
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