发明名称 |
Magneto resistance random access memory element |
摘要 |
A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.
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申请公布号 |
US7184300(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20030339378 |
申请日期 |
2003.01.09 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
KORKIN, LEGAL REPRESENTATIVE ANATOLI;ENGEL BRADLEY N.;RIZZO NICHOLAS D.;DEHERRERA MARK F.;JANESKY JASON ALLEN |
分类号 |
G11C11/00;G11C11/15;G11C11/16 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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