Shadow mask and method for producing a shadow mask

摘要

The disclosed device is directed towards a shadow mask for ion beams comprising a silicon wafer with a hole pattern arranged therein, wherein the silicon wafer is provided at a side confronting the incident ion beams with a metallic coating which stops the ion beams and dissipates heat, wherein an apertured region of the silicon wafer has a thickness from about 20 mum to about 200 mum and apertures in the shadow mask have lateral dimensions from about 0.5 mum to about 3 mum.