| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can make the avalanche resistance increased and suppress the increase in the on-state resistance, at the same time. SOLUTION: The semiconductor device comprises a first conductivity-type base region; a second conductivity-type drain region; a second conductivity-type source region; a channel forming region; a gate insulating film and gate electrode which are formed on each one portion of the second conductivity-type drain region and second conductivity-type source region; a short electrode formed so that it includes the top of the other portion of the second conductivity-type source region, and having a contact length, with the second conductivity-type source region in a direction facing the second conductivity-type drain region of 0.4μm or 0.8μm at the longest portion; and a first conductivity-type region arranged beneath the short electrode, so that it is located at the opposite side, with respect to the side facing the second conductivity-type drain region of second conductivity-type source region, and that it is adjacent to the first conductivity-type base region higher than the first conductivity-type base region in impurity concentration. COPYRIGHT: (C)2007,JPO&INPIT
|
