发明名称 |
Manufacturing method of semiconductor device and substrate processing apparatus |
摘要 |
To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.
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申请公布号 |
US2007042581(A1) |
申请公布日期 |
2007.02.22 |
申请号 |
US20050574571 |
申请日期 |
2005.01.21 |
申请人 |
HITACHI KOKUSAL ELECTRIC INC. |
发明人 |
SANO ATSUSHI;HORII SADAYOSHI;ITATANI HIDEHARU;ASAI MASAYUKI |
分类号 |
H01L21/24;C23C16/34;C23C16/44;C23C16/455;H01L21/316;H01L21/318 |
主分类号 |
H01L21/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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