发明名称 IMAGE SENSOR WITH IMPROVED FILL FACTOR AND FABRICATION METHOD THEREOF
摘要 An image sensor having an improved frill factor is provided to improve a fill factor while reducing a unit pixel area and enabling high integration by making a unit pixel include at least two photoelectric conversion devices wherein a reading-out devices for outputting a signal from the photoelectric conversion devices is shared. A photoelectric conversion active region, an interconnection reading-out active region(C_RoA) and a separation reading-out active region(I_RoA) are defined by a dielectric isolation region(DIR) formed in a substrate. The photoelectric conversion active region includes a plurality of photoelectric conversion active region units(PA_u1,PA_u2) disposed as a matrix type and junction isolation regions(JIR) positioned between photoelectric conversion active region units adjacent to a row direction and a column direction wherein the adjacent photoelectric conversion active region units are electrically separated by the junction isolation regions. The interconnection reading-out active region is positioned in one region surrounded by the corner parts of the photoelectric conversion active region units, extended from at least one of the surrounding corner parts and electrically separated from the rest of the corner part by the dielectric isolation region. The separation reading-out active region is positioned in another region surrounded by the corner part of the photoelectric conversion active region units, electrically separated from the surrounding corner parts by the dielectric isolation region. The reading-out active regions include channel regions. The dielectric isolation region is positioned at both sides of the channel regions.
申请公布号 KR100688589(B1) 申请公布日期 2007.02.22
申请号 KR20060022726 申请日期 2006.03.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SEOK HA;LEE, DUCK HYUNG;SHIN, JONG CHEOL;LEE, KANG BOK
分类号 H01L27/146 主分类号 H01L27/146
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