发明名称 PHOTORESIST COMPOSITION
摘要 PURPOSE: Provided is a photoresist composition which can be processed at relatively low temperature by using a high molecular weight compound incorporating crosslinkage without necessity of a separate crosslinking agent. CONSTITUTION: The photoresist composition comprises (1) 100 parts by weight of high molecular weight compounds having molecular weight of 7000-50000 of formula 1, which is obtained by incorporating a bisphenol-A diethanoldivinyl ether or 1,4-cyclohexane dimethanol divinyl ether, as crosslinking agent, between molecules of hydroxystyrene/styrene/t-butylacrylate copolymer or hydroxystyrene/styrene/ t-butylmethacrylate copolymer to crosslink the molecules; (2) 0.1-20 parts by weight of photosensitizer of formula 5; (3) 0.01-10 parts by weight of organic base; and (4) 500-1000 parts by weight of organic solvent. In the formulae, R1 represents hydrogen atom or methyl group, R2 represents t-butyl group or methyl group, R3 is methyl group, X is the formula a or b, each of l, m, and n is an integer satisfying formulae 0.05<=m/l<=0.5 and 0.05<=n/l<=0.5, Q- represents nonaflate or 10-camphorsulfonate, and Me is methyl group.
申请公布号 KR20020054527(A) 申请公布日期 2002.07.08
申请号 KR20000083648 申请日期 2000.12.28
申请人 CHEIL INDUSTRIES INC. 发明人 EO, DONG SEON;JANG, WON BEOM;KANG, DONG HEON;PARK, HYEON CHEOL;TAK, JONG HWAL
分类号 G03F7/039 主分类号 G03F7/039
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