| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device which can be manufactured with high accuracy, and a method of manufacturing the same. SOLUTION: A first electrode 132 is formed on a surface of the base 110, a ferroelectric film 234 is formed on the first electrode 132, and a first region 224 is formed on an upper surface of the ferroelectric film 234. A second region 226 is formed on surfaces of the base 110 and the ferroelectric film 234 excluding the upper surface of the ferroelectric film 234. A second electrode 236 is formed in the first region 234 by forming a layer of an electrode material on the base 110 on which the first electrode 132 and the ferroelectric film 234 are formed. COPYRIGHT: (C)2007,JPO&INPIT
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