Methods of forming floating gates in non-volatile memory devices including alternating layers of amorphous silicon and ALD dopant layers and floating gates so formed

摘要

A method of forming a silicon layer on a substrate includes providing a silicon source gas to form an amorphous silicon layer on a substrate and providing a dopant source gas to adsorb dopants onto the amorphous silicon layer to form a dopant layer on a surface of the amorphous silicon layer. Related floating gates are also disclosed.