| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which an insulating tolerance of a porosity film is settled and a wiring reliability is improved without generating any leakage current or the like between adjacent wiring lines. SOLUTION: The method comprises the steps of forming a porosity film 16 on a semiconductor substrate 12; forming a recess 22 in which the surface of the semiconductor substrate 12 is exposed at the bottom of the recess 22 in the porosity film 16; forming a non-porous film 24 so as to cover the inner wall of the recess 22, and whole surfaces of the porosity film 16; alternatively eliminating the non-porous film 24 formed at the bottom of the recess 22, and the non-porous film 24 located on the porosity film 16 by an anisotropic etching; and forming a barrier metal film 28 and a metal film so as to embed the recess 22. A process performing the anisotropic etching is carried out by an etching gas in which a mixing ratio expressed by formula: (compound gas including nitrogen + inert gas)/compound gas including fluorineis set 45 or more, or 100 or less. COPYRIGHT: (C)2007,JPO&INPIT
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