| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method by which a silicon-containing inorganic film can be made thinner when the film is used as a resist intermediate layer, and load on a photoresist film upon etching an antireflection film and the silicon-containing inorganic film can be decreased further compared to those by a conventional method. <P>SOLUTION: A multilayer resist film including a resist undercoat film, a first resist intermediate layer, a second resist intermediate layer as a silicon resin film containing a silicon resin, and a resist overcoat film, is formed. A pattern circuit region in the multilayer resist film is exposed and developed with a developing liquid to form a resist pattern in the resist overcoat film. The resist overcoat film is used as a mask to etch the first and second resist intermediate layer films. Then the first and second resist intermediate films are used as a mask to further etch the undercoat film, and the resist undercoat film is used as a mask to etch the substrate to form a pattern on the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
