| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a bonding structure with a high reliability obtainable under severe circumstances of changes in temperature. SOLUTION: The semiconductor device A comprises a transistor chip 10, a diode chip 11, thermal compensation plates 15 to 18, a first and a second external terminal 12, 13, and an external control terminal 19. A rivet member 20 passing through openings 12a, 13a of the first and the second external terminal 12, 13 is provided, and insulating plates 21, 22 are respectively interposed between the rivet member 20 and the first and the second external terminals 12, 13. The rivet memeber 20 comprising a metal or the like having a shape-memory alloy and an aging rubber-like elasticity is a pressure member for applying a pressure force leveraging a nonlinear elasticity such as superelasticity and the rubber-like elasticity to between the first and the second external terminal 12, 13. COPYRIGHT: (C)2007,JPO&INPIT |
