发明名称 Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
摘要 A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
申请公布号 US2007040172(A1) 申请公布日期 2007.02.22
申请号 US20060461907 申请日期 2006.08.02
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) 发明人 KAWAKAMI NOBUYUKI;KUGIMIYA TOSHIHIRO;GOTOH HIROSHI;TOMIHISA KATSUFUMI;HINO AYA
分类号 H01L29/04 主分类号 H01L29/04
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