发明名称 |
Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices |
摘要 |
A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
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申请公布号 |
US2007040172(A1) |
申请公布日期 |
2007.02.22 |
申请号 |
US20060461907 |
申请日期 |
2006.08.02 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) |
发明人 |
KAWAKAMI NOBUYUKI;KUGIMIYA TOSHIHIRO;GOTOH HIROSHI;TOMIHISA KATSUFUMI;HINO AYA |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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