| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing device of a semiconductor device capable of performing treatment with precision and high quality. SOLUTION: The method for manufacturing the semiconductor device is one that treats a processed object while heating it, and provided with a low temperature area temperature-raising step (S200) that heats a substrate 24 while measuring the temperature of the substrate 24 that should compose the semiconductor device with a pyrometer 27, a high temperature area temperature-raising step (S400) that switches a member to measure the temperature 24 from the pyrometer 27 to a radiation thermometer 22 when the temperature of the substrate 24 reaches a reference temperature, a high temperature area temperature-raising step (S400) that heats the substrate 24 by a treatment temperature while measuring the temperature of the substrate 24 by the radiation thermometer 22, and a deposition treatment step (S500) that treats the substrate 24 at such a temperature as the substrate 24 should be treated. COPYRIGHT: (C)2007,JPO&INPIT
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