发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>Provided is a plasma processing apparatus which can perform uniform processing even when a substrate to be processed has a large area. The plasma processing apparatus propagates microwaves introduced into wave guide tubes (102) to dielectric plates (104) through slots (103), and performs plasma processing to the surface of the substrate (107) by converting a gas supplied into a vacuum container (101) into the plasma state. In the plasma processing apparatus, a plurality of waveguide tubes (102) are arranged in parallel, a plurality of dielectric plates (104) are arranged for waveguide tubes (102), respectively, and partitioning members (106) formed of a conductor and grounded are arranged between the adjacent dielectric plates (104). The in-tube wavelength of the waveguide tube (102) is adjusted to be an optimum value by vertically moving a plunger (111). Furthermore, unintended plasma generation is eliminated in a space between the dielectric plate and the adjacent member, and stable plasma can be efficiently generated. As a result, high-speed and uniform processings, such as etching, form forming, cleaning, ashing, can be performed.</p>
申请公布号 WO2007020810(A1) 申请公布日期 2007.02.22
申请号 WO2006JP315464 申请日期 2006.08.04
申请人 TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED;OHMI, TADAHIRO;HIRAYAMA, MASAKI 发明人 OHMI, TADAHIRO;HIRAYAMA, MASAKI
分类号 H05H1/46;C23C16/511 主分类号 H05H1/46
代理机构 代理人
主权项
地址