CHEMICALLY MODIFIED POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING

摘要

A method of CMP of a substrate surface includes providing a polishing pad (20) having a polishing layer (26), that may be substantially free of abrasive particles, with a functional group (30) chemically bonded (covalent or ionic) to the polishing layer (26). The functional group (30) acts as an activator or catalyst for a compound of a polishing slurry (24) to exhibit a higher material removal rate for removing selected portions of the surface of the substrate (10) than exhibited in CMP of a substantially identical substrate (10) in the presence of a substantially identical polishing slurry (24) and a polishing pad (20) wherein the substantially identical polishing layer (26) does not have the functional group (30). The functional group (30) may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad (20) and the CMP pad (20) formed thereby is also disclosed.