发明名称 |
Method for reading non-volatile memory cells |
摘要 |
<p>A method includes changing a read reference level for reading a group of memory cells as a function of changes in a threshold voltage distribution of a different group of memory cells. The changing step includes determining a history read reference level of a group of history cells associated with a group of memory cells of a non-volatile memory cell array, allowing correct reading of the group of history cells, selecting a memory read reference level according to the first read reference level, and reading the non-volatile memory array cells.</p> |
申请公布号 |
EP1755128(A2) |
申请公布日期 |
2007.02.21 |
申请号 |
EP20060118948 |
申请日期 |
2006.08.15 |
申请人 |
SAIFUN SEMICONDUCTORS LTD. |
发明人 |
SHAPPIR, ASSAF;COHEN, GUY;LUSKY, ELI |
分类号 |
G11C16/26 |
主分类号 |
G11C16/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|