| 摘要 |
Ferroelectric memory cells ( 3 ) are presented, in which a cell resistor (R) is integrated into the cell capacitor (C) to inhibit charge accumulation or charge loss at the cell storage node (SN) when the cell ( 3 ) is not being accessed while avoiding significant disruption of memory cell access operations. Methods ( 100, 200 ) are provided for fabricating ferroelectric memory cells ( 3 ) and ferroelectric capacitors (C), in which a parallel resistance (R) is integrated in the capacitor ferroelectric material ( 20 ) or in an encapsulation layer ( 46 ) formed over the patterned capacitor structure (C).
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