发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of thin film transistors may also be aligned in the same direction. Further, the channel length direction may be different from the direction in which the base member is bent. A pixel portion and a driver circuit portion may also be provided on the base member. The invention also includes a method of manufacturing a semiconductor device including forming a layer to be peeled including an element of a substrate, bonding a support member to the layer to be peeled, and bonding a transfer body to the layer to be peeled.
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申请公布号 |
US7180091(B2) |
申请公布日期 |
2007.02.20 |
申请号 |
US20020208246 |
申请日期 |
2002.07.31 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKAYAMA TORU |
分类号 |
G02F1/1333;H01L29/04;G02F1/1362;G02F1/1368;G09F9/00;G09F9/30;G09F9/35;H01L21/02;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/08;H01L27/12;H01L27/32;H01L29/786;H01L31/036;H01L31/0376;H01L31/20 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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