发明名称 |
Solid-state imaging device and method for producing the same |
摘要 |
In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.
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申请公布号 |
US2007034981(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20060499697 |
申请日期 |
2006.08.07 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
SAITO MAKI |
分类号 |
H01L31/06;H01L27/148;H04N5/335;H04N5/372 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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