| 摘要 |
PROBLEM TO BE SOLVED: To provide a apparatus for manufacturing a semiconductor capable of improving material quality of an uniform heater plate, and growing a semiconductor crystal with little impurities mixed. SOLUTION: The apparatus for vapor growth of a semiconductor crystal on a semiconductor substrate 4 by causing a material gas 15 to flow onto the heated semiconductor substrate 4 includes the uniform heater plate 7 located adjacent to the substrate 4, between the device and a heating source for uniformly heating the substrate 4. Silicon carbide or gas impermeable carbon is used as the material of the uniform plate 7. COPYRIGHT: (C)2007,JPO&INPIT
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