发明名称 SEMICONDUCTOR MEMORY DEVICE AND STORAGE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a small-sized semiconductor memory device which can be stably operated at high speed by easily identifying a power supply voltage, and a storage circuit. SOLUTION: The semiconductor memory device and the storage circuit which are provided with a signal generating circuit for generating the signals made to corresponded to the power supply voltages of different voltage values respectively to attain the operation respectively at the power supply voltages of different voltage values by using the signal generated in the signal generating circuit. The semiconductor memory device is provided with a ring oscillator operating by the respective power supply voltages; a plurality of flip-flops for holding the output signals of the ring oscillator; and an identification circuit for identifying the voltage values of power supply voltages from output signals of the flip-flops. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007042223(A) 申请公布日期 2007.02.15
申请号 JP20050226308 申请日期 2005.08.04
申请人 SONY CORP 发明人 MAEDA HIDEO
分类号 G11C11/401;G11C11/407 主分类号 G11C11/401
代理机构 代理人
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