摘要 |
<p>A chemical mechanical polishing process including a single Step I CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.</p> |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;BOGGS, KARL;DARSILLO, MICHAEL;WRSCHKA, PETER;WELCH, JAMES |
发明人 |
BOGGS, KARL;DARSILLO, MICHAEL;WRSCHKA, PETER;WELCH, JAMES |