| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a deposition device and a semiconductor device which has a growing speed of the high selection epitaxial growth of Si or SiGe by reducing a temperature gradient of a heater, in a substrate treatment device supplying gas through a nozzle. <P>SOLUTION: The substrate treatment device which selectively grows a silicone epitaxial film on a silicone substrate is provided with a treatment chamber 12, a heating device 4 having a plurality of division zones that can heat the substrate stored in the processing chamber 12 and can perform different heating control and a gas supply system 8 supplying a silicone system gas and an etching system gas into the treatment chamber 12. The gas supply system 8 is provided with a plurality of gas supply members supplying the silicone system gases or the etching system gases to a plurality of different places in the treatment chamber 12. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
