发明名称 Heteroübergangsstruktur des Ladungstrennungs-Typs und deren Herstellungsverfahren
摘要 <p>A charge separation heterojunction structure which uses a fullerene polymer film as a part of its constituent materials and which may be used to produce a solar cellor a light emitting diode superior in durability, physical properties of electrons and economic merits. The heterojunction structure is such a structure in which an electron-donating electrically conductive high-polymer film and an electron-accepting fullerene polymer film are layered between a pair of electrodes at least one of which is light transmitting. In forming the layers, the fullerene polymer film is identified using in particular the Raman and Nexafs methods in combination so that upper layers are formed after identifying the polymer film. <IMAGE></p>
申请公布号 DE60032671(D1) 申请公布日期 2007.02.15
申请号 DE2000632671 申请日期 2000.06.23
申请人 SONY CORP.;RESEARCH INSTITUTE OF INNOVATIVE TECHNOLOGY FOR THE EARTH 发明人 RAMM, MATTHIAS;ATA, MASAFUMI
分类号 C01B31/02;B01J35/00;H01L21/302;H01L21/461;H01L51/00;H01L51/30;H01L51/40;H01L51/42;H01L51/50 主分类号 C01B31/02
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