| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor image sensing device of a small size and a thin profile, and capable of removing optical noises such as a flare, a smear or the like; and to provide a manufacturing method for the semiconductor image sensing device. SOLUTION: The semiconductor image sensing device has a semiconductor image-sensing element 10 with image-sensing regions 14, peripheral circuit regions 16, and electrode regions 18; and a transparent resin layer 24 formed on the surface of the semiconductor image-sensing element 10. The semiconductor image sensing device further has columnar electrodes 22 formed on electrode terminals 20 and used for an electrical connection to the outside, and the transparent resin layer 24 formed on the top face of the semiconductor image-sensing element 10. The top faces of the columnar electrodes 22 and that of the transparent resin layer 24 are formed in approximately the same height. COPYRIGHT: (C)2007,JPO&INPIT |
