发明名称 CONFIGURATION OF A MULTILEVEL FLASH MEMORY DEVICE
摘要 A multi-level flash memory device allows for a faster and more effective configuration of the operating parameters of the memory device for performing the different functioning algorithms of the memory The identification of an optimal configuration of the operating parameters of the memory device during testing is simplified by allowing for a one-time processing of configuration bits into algorithm-friendly data that are stored in an embedded ancillary random access memory at every power-on of the memory device This is done by executing a specific power-on algorithm code stored in the ancillary read only memory of the embedded microprocessor.
申请公布号 US2007038852(A1) 申请公布日期 2007.02.15
申请号 US20060460777 申请日期 2006.07.28
申请人 STMICROELECTRONICS S.R.L. 发明人 BOVINO ANGELO;RAVASIO ROBERTO;MICHELONI RINO
分类号 G06F15/177;G06F9/00;G06F9/24;G11C11/34;G11C16/04 主分类号 G06F15/177
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