发明名称 IC WITH ON-DIE POWER-GATING CIRCUIT
摘要 <p>A semiconductor device is described that includes, on a single die, both a functional circuit and a power-gating circuit. The power-gating circuit is used to control the power delivered to core circuit elements such as the functional circuit on the semiconductor device. The power is provided to and possibly from the power-gating circuit using underutilized die connection elements such as C4 bumps.</p>
申请公布号 WO2007018856(A1) 申请公布日期 2007.02.15
申请号 WO2006US26381 申请日期 2006.07.06
申请人 INTEL CORPORATION;BURTON, EDWARD 发明人 BURTON, EDWARD
分类号 G06F1/26;G06F1/32;H01L23/485;H01L23/50 主分类号 G06F1/26
代理机构 代理人
主权项
地址