发明名称 |
IC WITH ON-DIE POWER-GATING CIRCUIT |
摘要 |
<p>A semiconductor device is described that includes, on a single die, both a functional circuit and a power-gating circuit. The power-gating circuit is used to control the power delivered to core circuit elements such as the functional circuit on the semiconductor device. The power is provided to and possibly from the power-gating circuit using underutilized die connection elements such as C4 bumps.</p> |
申请公布号 |
WO2007018856(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
WO2006US26381 |
申请日期 |
2006.07.06 |
申请人 |
INTEL CORPORATION;BURTON, EDWARD |
发明人 |
BURTON, EDWARD |
分类号 |
G06F1/26;G06F1/32;H01L23/485;H01L23/50 |
主分类号 |
G06F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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