| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which forms an ohmic electrode, having a low contact resistance on a GaInP or AlGaInP layer. SOLUTION: The method comprises preparing a semiconductor substrate with a GaInP layer or AlGaInP layer laminated on an n- or p-type GaAs layer, laminating an ohmic metal, containing at least Ti and Ge or Zn on the GaInP or AlGaInP layer, heat treating to make Ge or Zn act as an impurity in an ohmic alloy layer, formed by solid phase reaction of Ti with the GaInP or AlGaInP layer, thus forming an ohmic contact with the GaAs layer. COPYRIGHT: (C)2007,JPO&INPIT |
