发明名称 |
Single crystal of silicon carbide, and method and apparatus for producing the same |
摘要 |
A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.
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申请公布号 |
US2007034145(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20040558369 |
申请日期 |
2004.05.28 |
申请人 |
BRIDGESTONE CORPORATION |
发明人 |
MARUYAMA TAKAYUKI;KOBAYASHI YOSHINORI;MONBARA TAKUYA |
分类号 |
C30B23/00;C30B29/36;C30B25/00;C30B28/12;C30B28/14;H01L21/20;H01L33/34 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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