| 发明名称 |
ATOMIC LAYER DEPOSITION OF RUTHENIUM-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS AND SELECTED RUTHENIUM COMPLEXES |
| 摘要 |
<p>This invention is directed to processes for the formation of ruthenium-containing films on surfaces in atomic layer deposition (ALD) processes using surface-activating agents, and to ruthenium complexes that can be used as ruthenium precursors in these processes.</p> |
| 申请公布号 |
WO2007019437(A1) |
申请公布日期 |
2007.02.15 |
| 申请号 |
WO2006US30712 |
申请日期 |
2006.08.07 |
| 申请人 |
E. I. DU PONT DE NEMOURS AND COMPANY;THOMPSON, JEFFERY, SCOTT |
发明人 |
THOMPSON, JEFFERY, SCOTT |
| 分类号 |
C23C16/455;C23C16/18 |
主分类号 |
C23C16/455 |
| 代理机构 |
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