| 摘要 |
The present invention provides a semiconductor device, a method of manufacture therefore and an integrated circuit including the same. The semiconductor device ( 300 ), without limitation, may include a gate electrode ( 320 ) having a gate length (l) and a gate width (w) located over a substrate ( 310 ) and a gate electrode material feature ( 330 ) located adjacent a gate width (w) side of the gate electrode ( 320 ). The semiconductor device ( 300 ) may further include a silicide region ( 350 ) located over the substrate ( 310 ) proximate a side of the gate electrode ( 320 ), the gate electrode material feature ( 330 ) breaking the silicided region ( 350 ) into multiple silicide portions ( 353, 355, 358 ).
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