| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve manufacturing yield and reliability of a semiconductor device having a phase transition memory. <P>SOLUTION: On a semiconductor substrate 11, a resistive element 54 is formed of a peeling-preventing film 51, chalcogenide recording layer 52, and upper electrode film 53. Insulating films 61 and 62 are formed to cover the resistive element 54. A through-hole 63, for exposing the upper electrode film 53, is formed at the insulating films 62 and 61. A plug 64 for electrically connecting to the upper electrode film 53 is formed inside the through-hole 63. When forming the through-hole 63, the insulating film 62 is dry-etched by using the insulating film 61 of silicon nitride as etching stopper, and then the insulating film 61 is dry-etched so that the upper electrode film 53 is made to expose from the through-hole 63. <P>COPYRIGHT: (C)2007,JPO&INPIT |
