| 发明名称 |
PLASMA PROCESS DEVICE CHAMBER MEMBER AND ITS MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma process device chamber member in which plasma resistance is secured, which can be used for long time even if a cleaning processing is repeated and which is economically advantageous. <P>SOLUTION: The plasma process device chamber member is formed of an aluminum nitride sintered body whose porosity is 1% or less and whose torn face shows quality of transgranular fracture. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2007042672(A) |
申请公布日期 |
2007.02.15 |
| 申请号 |
JP20050221905 |
申请日期 |
2005.07.29 |
| 申请人 |
IBIDEN CO LTD |
发明人 |
KIRIYAMA KATSUYUKI;SUGINO JUNICHI |
| 分类号 |
H01L21/31;C04B35/581;C04B35/626;C23C16/44;H01L21/3065 |
主分类号 |
H01L21/31 |
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