发明名称 Growing [110] silicon on [001] oriented substrate with rare-earth oxide buffer film
摘要 An assembly and method of making the same wherein the assembly incorporates a rare-earth oxide film to form a [110] crystal lattice orientation semiconductor film. The assembly comprises a substrate, a rare-earth oxide film formed on the substrate, and a [110]-oriented semiconductor film formed on the rare-earth oxide film. The rare-earth oxide film having a [110] crystal lattice orientation. The substrate has a [001] crystal lattice orientation.
申请公布号 US2007037329(A1) 申请公布日期 2007.02.15
申请号 US20060582048 申请日期 2006.10.16
申请人 KELMAN MAXIM B 发明人 KELMAN MAXIM B.
分类号 H01L21/84 主分类号 H01L21/84
代理机构 代理人
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