Conductions and vias between different, stacked metallic layers of a semiconductor device may be mechanically damaged by mechanical strain. According to an exemplary embodiment of the present invention, this mechanical strain may be transferred through the layer structure to the substrate by a grid of grounding structures and isolation and passivation layers which are connected by the grounding structures. This may provide for an enhancement of the lifetime of the semiconductor devices.
申请公布号
WO2007017786(A2)
申请公布日期
2007.02.15
申请号
WO2006IB52607
申请日期
2006.07.31
申请人
PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH;KONINKLIJKE PHILIPS ELECTRONICS N. V.;HABENICHT, SOENKE;THORNS, ANSGAR;ZEILE, HEINRICH