| 摘要 |
Process for manufacturing a multi-drain power electronic device (30) integrated on a semiconductor substrate (100) of a first type of conductivity, characterised in that it comprises the following steps:
- forming a first semiconductor layer (21) of the first type of conductivity and of a first resistivity (Á 1 ) value and a first thickness (X1) on the semiconductor substrate (100),
- forming at least a second semiconductor layer (23) of a second type of conductivity and of a second resistivity (Á 2 ) value and a second thickness (X2) on the first semiconductor layer (21),
- forming, in this at least a second semiconductor layer (23), a first plurality of implanted regions (D3) of the first type of conductivity by means of a first selective implant step with a first implant dose (¦ 3 ),
- forming implanted body regions (40) of the second type of conductivity in portions of said second semiconductor layer (23) free from said first plurality of implanted regions (D3),
- carrying out a thermal diffusion process so that the first plurality of implanted regions (D3) form a first plurality of electrically continuous implanted column regions (D) of the first type of conductivity along this at least a second semiconductor layer (23) and in electric contact with the first semiconductor layer (21), the first plurality of column implanted regions (D) delimiting a second plurality of column regions (50) of the second type of conductivity, said implanted body regions (40) resulting to be formed in said second plurality of column regions (50).
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