SOLID-STATE IMAGING DEVICE

摘要

The present invention provides a solid-state imaging device in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device 1 includes a plurality of pixel units 11 and 11b each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors C2a and C2b, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors Qa and Qb which are alternately connected with the associated capacitor C2a or C2b. By disconnecting the MOS transistor Qa or Qb, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor C2a or C2b, and by conducting the MOS transistors Qa and Qb to sum the signals of the pixel units, the capacitors C2a and C2b are connected in series.