发明名称 |
Active matrix display device and manufacturing method thereof |
摘要 |
The present invention discloses a method of manufacturing an active matrix display device, comprising: a) forming a semiconductor layer on an insulating substrate; b) forming a gate insulating layer over the whole surface of the substrate while convering the semiconductor layer; c) forming a gate electrode on the gate insulating layer over the semiconductor layer; d) forming spacers on both side wall portions of the gate electrode while exposing both end portions of the semiconductor layer; e) ion-implaing a high-density impurity into the semiconductor layer to form high-density source and drain regions in the semiconductor layer; f) depositing sequentially a transparent conductive layer and a metal layer on the inter insulating layer; g) patterning the transparent conductive layer and the metal layer to form the source and drain electrodes, the source and drain electrodes directly contacting the high-density source and drain regions and having a dual-layered structure; h) forming a passivation layer over the whole surface of the substrate; i) etching the passivation layer and the metal layer to form an opening portion exposing a portions of the transparent conductive layer, thereby forming a pixel electrode; and j) performing a reflow process to cover the metal layer in the opening portion by the passivation layer. |
申请公布号 |
US7176493(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20030736703 |
申请日期 |
2003.12.17 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
SO WOO YOUNG;YOO KYUNG JIN;PARK SANG IL |
分类号 |
H01L21/28;H01L21/84;G02F1/136;G02F1/1362;H01L21/3205;H01L21/336;H01L21/77;H01L23/52;H01L27/12;H01L29/417;H01L29/45;H01L29/786 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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