APPARATUS FOR TREATING PLASMA AND METHOD FOR CLEANING THE SAME

摘要

A plasma processing apparatus and its cleaning method are provided to remove a deposited material formed on an inner wall of an inner chamber at a uniform etching speed by directly applying high frequency power to the inner chamber. An external chamber(120) accommodates an inner chamber(110). The external chamber has a gas supplying member(140) which supplies a process gas or a cleaning gas to the inner chamber. An inner electrode(130) is located in the inner chamber. A plasma generating member(160) independently applies power to the inner electrode and the inner chamber. The plasma generating member includes a first high frequency generator(161) and a second high frequency generator(165). The first high frequency generator applies high frequency power to the inner electrode. The second high frequency generator applies high frequency power to the inner chamber.