| 摘要 |
A polymer detection method is provided to increase a size of the polymer by using a nitride layer and an oxide layer formed in a low-voltage region, thereby improving its productivity. A sacrificed nitride layer(104) and a sacrificed oxide layer(106) are formed on a semiconductor substrate(100) which is divided into a first region and a second region by isolation regions(102,102a,102b). The substrate is subjected to a selective etching process to remove the sacrificed nitride layer and the sacrificed oxide layer. An oxide layer is formed on the first region, and a photosensitive film pattern is formed to expose the sacrificed nitride film of the second region and protect the first region. The sacrificed nitride film and sacrificed oxide layer of the second region are removed, and the photosensitive film pattern is eliminated. A polymer of the semiconductor substrate is detected.
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