发明名称 |
Epitaxy layer and method of forming the same |
摘要 |
A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A Si-Ge layer containing 5 to 10% germanium is formed on the Si base layer by epitaxy to normalize the overall thickness of the Si base layer and the Si-Ge layer containing 5 to 10% germanium.
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申请公布号 |
US7175709(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040847099 |
申请日期 |
2004.05.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TSAI PANG-YEN;YAO LIANG-GI;LIN CHUN-CHIEH;LEE WEN-CHIN;CHEN SHIH-CHANG |
分类号 |
C30B25/04;C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B25/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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