Semiconductor laser device

摘要

A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index n_s for laser light, a first clad layer of a refractive index n_c1, a second clad layer of a refractive index n_c2, a third clad layer of a refractive index n_c3, a first conductivity type guide layer of a refractive index n_g, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index n_e, and a relationship of n_c2<(N_c1, n_c3)e<(N_s, n_g) is satisfied.