发明名称 Semiconductor device with a multi-level interconnect structure and method for making the same
摘要 A semiconductor device includes a semiconductor die and a multi-level interconnect structure that has a first insulating layer formed on the die, conductive horizontal bodies, each of which is connected to a respective bonding pad of the die and has an extension formed on the first insulating layer, a second insulating layer formed on the first insulating layer, and conductive vertical bodies, each of which is connected to the extension of a respective conductive horizontal body and extends through the second insulating layer.
申请公布号 US7176573(B2) 申请公布日期 2007.02.13
申请号 US20030716948 申请日期 2003.11.19
申请人 发明人 SHEN YU-NUNG
分类号 H01L23/48;H01L23/31;H01L23/525 主分类号 H01L23/48
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